Semiconductor Package Using A Coreless Signal Distribution Structure

ABSTRACT

A semiconductor package using a coreless signal distribution structure (CSDS) is disclosed and may include a CSDS comprising at least one dielectric layer, at least one conductive layer, a first surface, and a second surface opposite to the first surface. The semiconductor package may also include a first semiconductor die having a first bond pad on a first die surface, where the first semiconductor die is bonded to the first surface of the CSDS via the first bond pad, and a second semiconductor die having a second bond pad on a second die surface, where the second semiconductor die is bonded to the second surface of the CSDS via the second bond pad. The semiconductor package may further include a metal post electrically coupled to the first surface of the CSDS, and a first encapsulant material encapsulating side surfaces and a surface opposite the first die surface of the first semiconductor die, the metal post, and a portion of the first surface of the CSDS.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of U.S. application Ser. No.17/156,788, filed Jan. 25, 2021, which is a continuation of U.S.application Ser. No. 15/689,714, filed Aug. 29, 2017, now U.S. Pat. No.10,903,190, which is a continuation of U.S. application Ser. No.15/018,668, filed on Feb. 8, 2016, now U.S. Pat. No. 9,780,074, whichclaims priority to and claims the benefit of Korean Patent ApplicationNo. 10-2015-0019458, filed on Feb. 9, 2015, the disclosures of each arehereby incorporated herein by reference in their entirety.

FIELD

Certain example embodiments of the disclosure relate to semiconductorchip packaging. More specifically, certain example embodiments of thedisclosure relate to a semiconductor package using a coreless signaldistribution structure.

BACKGROUND

Present semiconductor packages and methods for forming semiconductorpackages (e.g. multi-dimensional packages and methods utilizinginterposer technology with through-silicon vias) are inadequate, forexample resulting in excess cost, decreased reliability, or packagesizes that are too large. For example, current interposer technologyfurther limitations and disadvantages of conventional and traditionalapproaches will become apparent to one of skill in the art, throughcomparison of such approaches with the present disclosure as set forthin the remainder of the present application with reference to thedrawings.

Further limitations and disadvantages of conventional and traditionalapproaches will become apparent to one of skill in the art, throughcomparison of such systems with the present disclosure as set forth inthe remainder of the present application with reference to the drawings.

BRIEF SUMMARY

Various aspects of the present disclosure provide a semiconductorpackage, and a method of manufacturing thereof. For example and withoutlimitation, various aspects of the present disclosure provide athree-dimensional semiconductor package, using a coreless signaldistribution structure, and a method of manufacturing thereof,substantially as shown in and/or described in connection with at leastone of the figures, as set forth more completely in the claims.

Various advantages, aspects and novel features of the presentdisclosure, as well as details of various illustrated example supportingembodiments, will be more fully understood from the followingdescription and drawings.

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

FIGS. 1A through 1K are cross-sectional views illustrating a method ofmanufacturing a semiconductor device according to an embodiment of thepresent disclosure.

FIG. 2 is a cross-sectional view illustrating a semiconductor deviceaccording to another embodiment of the present disclosure.

FIG. 3 is a cross-sectional view illustrating a semiconductor deviceaccording to still another embodiment of the present disclosure.

FIG. 4 is a cross-sectional view illustrating a semiconductor deviceaccording to still another embodiment of the present disclosure.

FIG. 5 is a cross-sectional view illustrating a semiconductor deviceaccording to still another embodiment of the present disclosure.

DETAILED DESCRIPTION

The following discussion presents various aspects of the presentdisclosure by providing examples thereof. Such examples arenon-limiting, and thus the scope of various aspects of the presentdisclosure should not necessarily be limited by any particularcharacteristics of the provided examples. In the following discussion,the phrases “for example,” “e.g.,” and “exemplary” are non-limiting andare generally synonymous with “by way of example and not limitation,”“for example and not limitation,” and the like.

As utilized herein, “and/or” means any one or more of the items in thelist joined by “and/or”. As an example, “x and/or y” means any elementof the three-element set {(x), (y), (x, y)}. In other words, “x and/ory” means “one or both of x and y.” As another example, “x, y, and/or z”means any element of the seven-element set {(x), (y), (z), (x, y), (x,z), (y, z), (x, y, z)}. In other words, “x, y and/or z” means “one ormore of x, y, and z.”

The terminology used herein is for the purpose of describing particularexamples only and is not intended to be limiting of the disclosure. Asused herein, the singular forms are intended to include the plural formsas well, unless the context clearly indicates otherwise. It will befurther understood that the terms “comprises,” “includes,” “comprising,”“including,” “has,” “have,” “having,” and the like when used in thisspecification, specify the presence of stated features, numbers, steps,operations, elements, and/or components, but do not preclude thepresence or addition of one or more other features, numbers, steps,operations, elements, components, and/or groups thereof.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another element. Thus, for example, a first element, afirst component or a first section discussed below could be termed asecond element, a second component or a second section without departingfrom the teachings of the present disclosure. Similarly, various spatialterms, such as “upper,” “lower,” “side,” and the like, may be used indistinguishing one element from another element in a relative manner. Itshould be understood, however, that components may be oriented indifferent manners, for example a semiconductor device or package may beturned sideways so that its “top” surface is facing horizontally and its“side” surface is facing vertically, without departing from theteachings of the present disclosure.

It will also be understood that terms coupled, connected, attached, andthe like include both direct and indirect (e.g., with an interveningelement) coupling, connecting, attaching, etc., unless explicitlyindicated otherwise. For example, if element A is coupled to element B,element A may be indirectly coupled to element B through an intermediatesignal distribution structure, element A may be directly coupled toelement B (e.g., adhered directly to, soldered directly to, attached bydirect metal-to-metal bond, etc.), etc.

In the drawings, the dimensions of structures, layers, regions, etc.(e.g., absolute and/or relative dimensions) may be exaggerated forclarity. While such dimensions are generally indicative of an exampleimplementation, they are not limiting. For example, if structure A isillustrated as being larger than region B, this is generally indicativeof an example implementation, but structure A is generally not requiredto be larger than structure B, unless otherwise indicated.

Certain aspects of the disclosure may be found in a semiconductorpackage comprising a coreless signal distribution structure. Exampleaspects of the disclosure may comprise a coreless signal distributionstructure comprising at least one dielectric layer, at least oneconductive layer, a first surface, and a second surface opposite to thefirst surface. The semiconductor package may also comprise a firstsemiconductor die having a first bond pad on a first die surface, wherethe first semiconductor die is bonded to the first surface of thecoreless signal distribution structure via the first bond pad, and asecond semiconductor die having a second bond pad on a second diesurface, where the second semiconductor die bonded to the second surfaceof the coreless signal distribution structure via the second bond pad.The semiconductor package may further comprise a metal post electricallycoupled to the first surface of the coreless signal distributionstructure, and a first encapsulant material encapsulating side surfacesof the first semiconductor die, the metal post, and a portion of thefirst surface of the coreless signal distribution structure, where asurface of the first encapsulant material is coplanar with a surface ofthe first semiconductor die opposite the first die surface of thesemiconductor die. The metal post may comprise copper and extend throughthe encapsulant material. A second encapsulant material may encapsulatethe second semiconductor die. A second metal post may be coupled to thecoreless signal distribution structure and extend through the secondencapsulant material. A surface of the second encapsulant may becoplanar with a surface of the second semiconductor die opposite thesecond die surface. A conductive pillar may electrically couple thefirst bond pad of the first semiconductor die to the coreless signaldistribution structure. A redistribution structure may be on the firstencapsulant and electrically coupled to the metal post, wherein theredistribution structure may comprise at least one conductive layer andat least one dielectric layer. The redistribution structure may, forexample, comprise a linewidth of 1-10 μm.

Referring to FIGS. 1A through 1K, cross-sectional views illustrating amethod of manufacturing a semiconductor device 100 according to anembodiment of the present disclosure are illustrated.

The method of manufacturing a semiconductor device 100 according to anembodiment of the present disclosure includes providing a wafer (FIG.1A), providing a signal distribution structure having a first surfaceand a second surface (FIG. 1B), forming a first pad and a first post ona first surface of the signal distribution structure (FIG. 1C),connecting a first semiconductor die to the first pad (FIG. 1D),encapsulating the first semiconductor die and the first post using afirst encapsulant (FIG. 1E), forming a first redistribution structureand/or a first pad on the first post (FIG. 1F), connecting a carrier(FIG. 1G), forming a second pad on the second surface of the signaldistribution structure after removing a wafer (FIG. 1H), connecting asecond semiconductor die to the second pad (FIG. 1I), encapsulating thesecond semiconductor die using a second encapsulant and removing thecarrier (FIG. 1J), and forming conductive interconnection structures(FIG. 1K).

As illustrated in FIG. 1A, a wafer 10 may be provided that comprises asilicon substrate, a glass substrate, or other support structure with asubstantially planar top surface, but aspects of the present disclosureare not limited thereto. The wafer 10 may, for example, serve as a basesubstrate on which coating, photolithographic etching, and/or platingmay be performed to form a signal distribution structure 110, an exampleof which is described further with respect to FIG. 1B.

FIG. 1B illustrates an example signal distribution structure 110 havinga planar first surface 110 a (e.g., a planar first surface) and a secondsurface 110 b (e.g., a planar second surface) opposite to the firstsurface 110 a formed on the top surface of the wafer 10. In an exampleembodiment, the signal distribution structure 110 may be formed byproviding a first dielectric layer 111 on the top surface of the wafer10, forming a first conductive layer 112 on the first dielectric layer111, forming a second dielectric layer 113 on the first conductive layer112 and on the first dielectric layer 111, forming a second conductivelayer 114 on the second dielectric layer 113, and forming a thirddielectric layer 115 on the second conductive layer 114 and on the firstdielectric layer 111. In addition, although not shown, the firstconductive layer 112 and the second conductive layer 114 may beelectrically connected to each other by a conductive via, for examplethrough the second dielectric layer 112 (not shown). Further, the firstand second conductive layers 112 and 114, the first, second and thirddielectric layers 111, 113 and 115 and the conductive via (not shown)may be formed by general coating, photolithographic etching and/orplating, as described above.

In an example embodiment, the signal distribution structure 110 may beformed on the wafer 10 using a wafer fabrication process and/or abumping process but then is removed from the wafer, i.e., there is nosupport substrate or die. Accordingly, the signal distribution structure110 may have a linewidth in a range of 1 μm to 10 μm, and the thicknessof the conductive and dielectric layers may be 1-10 μm. In contrast,since a printed circuit board is formed by a substrate assemblingprocess, it has a linewidth that is substantially greater. In addition,the signal distribution structure 110 according to the presentdisclosure does not have a thick, hard layer, such as a core, unlikeprinted circuit boards, i.e., the signal distribution structure is“coreless.” Therefore, the coreless aspect of the signal distributionstructure 110 enables a smaller linewidth and reduced overall packagethickness.

In an example embodiment, two conductive layers and three dielectriclayers are illustrated, but aspects of the present disclosure are notlimited thereto. For example, the signal distribution structure 110 maybe formed with any number of conductive layers and/or dielectric layers.For example, the signal distribution structure 110 may comprise a singleconductive layer and two dielectric layers, three conductive layers andfour dielectric layers, etc.

The first and second conductive layers 112 and 114 and the conductivevia may comprise copper, a copper alloy, aluminum, an aluminum alloy,and similar materials, for example, but aspects of the presentdisclosure are not limited thereto. In addition, first, second, andthird dielectric layers 111, 113 and 115 may comprisebismaleimidetriazine (BT), phenolic resin, polyimide (PI),benzocyclobutene (BCB), polybenzoxazole (PBO), epoxy, silicon oxide,silicon nitride, and similar materials, for example, but aspects of thepresent disclosure are not limited thereto.

In an example scenario in which the first, second, and/or thirddielectric layers 111, 113 and 115 comprise organic materials, they maybe formed by screen printing, spin coating, or other similar processes,but aspects of the present disclosure are not limited thereto. Inanother example scenario, in which the first, second and thirddielectric layers 111, 113 and 115 comprise inorganic materials, theymay be formed by chemical vapor deposition (CVD), physical vapordeposition (PVD), or other similar processes, but aspects of the presentdisclosure are not limited thereto. The first and second conductivelayers 112 and 114 may be formed by metal deposition, metal evaporation,metal sputtering, and similar processes, but aspects of the presentdisclosure are not limited thereto.

As illustrated in FIG. 1C, the first pad 116 and the first post 117 maybe formed on and/or connected to the first surface 110 a of the signaldistribution structure 110, for example, to the second conductive layer114. More specifically, a plurality of first pads 116 may be positionedon the first surface 110 a of the signal distribution structure 110 in amatrix configuration. Also, a plurality of the first posts 117 may beformed on a plurality of the first pads 116, which may be positionedaround a periphery (e.g., at or near an edge) of the first surface 110 aof the signal distribution structure 110.

The first post 117 may, for example, be taller (e.g., longitudinallythicker) than the first pad 116, and may be formed to have a height(e.g., a longitudinal thickness) that is greater than or equal to athickness of the first semiconductor die 120 (See, e.g., FIG. 1D).

The first pad 116 and/or the first post 117 may be formed by generalplating and photolithographic etching and may comprise copper, a copperalloy, aluminum, an aluminum alloy, or similar materials, but aspects ofthe present disclosure are not limited thereto.

As illustrated in FIG. 1D, a first semiconductor die 120 may beelectrically connected to the first pad 116, which may be centrallylocated on the signal distribution structure 110. The firstsemiconductor die 120 may comprise a bond pad 121 on an active surfaceof the die where at least one active device is located. A conductivepillar 122 and a solder cap 123 may be formed on the bond pad 121 forelectrically coupling to the die 120. The solder cap 123 may beelectrically connected to the first pad 116 by a reflow process. Inaddition, a solder bump may be formed on the bond pad 121. The solderbump may be electrically connected to the first pad 116 by a reflowprocess. In an example embodiment, the conductive pillar 122 and thesolder cap 123 may be formed with smaller widths than solder bumps.Thus, for fine pitch, the conductive pillar 122 and the solder cap 123may be utilized as opposed to solder bumps. Note that the scope of thisdisclosure is not however limited to any particular type ofinterconnection structure(s) that may be utilized to attached the firstsemiconductor die 120 to the signal distribution structure 110.

In addition, in order to stably fix the first semiconductor die 120after the reflow process is completed, a first underfill 124 may beformed between the first semiconductor die 120 and the signaldistribution structure 110. The first underfill 124 may cover theconductive pillar 122 and the solder cap 123, thereby enhancing thereliability in the electrical connection between the signal distributionstructure 110 and the first semiconductor die 120. Such first underfill124 may be formed in any of a variety of manners, for example bycapillary underfilling. Note that the underfill 124 may also be formedwhile the first semiconductor die 120 is being placed and/or attached tothe signal distribution structure 110, for example utilizing apre-applied underfill. Also note that the first semiconductor die 120may be underfilled during a molding process, for example by moldedunderfilling.

As illustrated in FIG. 1E, the first semiconductor die 120 and the firstpost 117 may be encapsulated using the first encapsulant 130, which mayprotect the first semiconductor die 120 and the first post 117 from theexternal environment. In an example scenario, the first encapsulant 130may also encapsulate the first underfill 124. Alternatively, asdiscussed herein, the first encapsulant 130 may also provide the firstunderfill 124. A top surface of the first post 117 may be exposed to theoutside from a top surface of the first encapsulant 130, therebyallowing the first redistribution structure 141 and/or the first bumppad 143 to later be connected to the first post 117 (See e.g., FIG. 1F).The top surface of the first post 117 and the top surface of the firstencapsulant 130 may be coplanar and may be substantially planar, thoughsuch coplanarity is not necessary. During the encapsulating, the firstencapsulant 130 may encapsulate the top surface of the first post 117.However, the top surface of the first post 117 may be exposed fromand/or protrude to the outside of the first encapsulant 130 by grindingand/or etching. Note that the top surface of the first post 117 may berevealed by forming a via through the first encapsulant (e.g., bymechanical and/or laser ablation, etc.).

As illustrated in FIG. 1F, a first redistribution structure 141 and/orfirst bump pad 143 may be electrically connected to the first post 117,for example to a top surface of the first post 117. In an exampleembodiment, the first redistribution structure 141 may comprise one ormore conductive layers and dielectric layers to redistribute electricalconnections laterally (e.g., laterally over the top surface of the firstencapsulant 130). In the example illustration in FIG. 1 F, the firstredistribution structure may be electrically connected to one or more ofthe first posts 117 to the left of the first semiconductor die 120, andthe first bump pad 143 may be electrically connected to one or more ofthe first posts 117 to the right of the first semiconductor die 120. Theconductive layers in the first redistribution structure 141 may comprisecopper, a copper alloy, aluminum, an aluminum alloy, and similarmaterials, for example, but aspects of the present disclosure are notlimited thereto.

The conductive layers in the first redistribution structure 141 may, forexample, be formed or deposited using any one or more of a variety ofprocesses (e.g., electrolytic plating, electroless plating, chemicalvapor deposition (CVD), sputtering or physical vapor deposition (PVD),plasma vapor deposition, printing, etc.). In addition, dielectric layersin the redistribution structure 141 may comprise bismaleimidetriazine(BT), phenolic resin, polyimide (PI), benzocyclobutene (BCB),polybenzoxazole (PBO), epoxy, silicon oxide, silicon nitride, andsimilar materials, for example, but aspects of the present disclosureare not limited thereto. The dielectric layers in first redistributionstructure 141 may be formed using any one or more of a variety ofdielectric forming or deposition processes, for example printing, spincoating, spray coating, sintering, thermal oxidation, physical vapordeposition (PVD), chemical vapor deposition (CVD), plasma vapordeposition, sheet lamination, etc.

A first dielectric layer 144 (which may also be referred to herein as aprotection layer) may be formed on a surface of first encapsulant 130,for example around a periphery of the first post 117, and a firstconductive layer of the first redistribution structure 141 and the firstbump pad 143 may then be formed. A region of the first conductive layer,which is not required to be exposed to the outside, may be covered bythe second dielectric layer 145 (which may also be referred to herein asa protection layer). The first and second dielectric layers 144 and 145may comprise dielectric layers that electrically isolate conductivelayers and may comprise general bismaleimidetriazine (BT), phenolicresin, polyimide (PI), benzocyclobutene (BCB), polybenzoxazole (PBO),epoxy, silicon oxide, silicon nitride or similar materials, but aspectsof the present disclosure are not limited thereto. The first and seconddielectric layers 144 and 145 may be formed by chemical vapor deposition(CVD), physical vapor deposition (PVD), or other similar depositionprocess, but aspects of the present disclosure are not limited thereto.

In an example embodiment, the first redistribution structure 141 may beof a fan-in type that extends from the outside to the inside (e.g.,distributing signals from outside of the footprint of the firstsemiconductor die 120 to within the footprint of the first semiconductordie 120). Accordingly, a first land 142 exposed to the outside may bepositioned on (or over) the first semiconductor die 120. In such amanner, conductive bumps 170 (or any of a variety of types ofinterconnection structures) may later be electrically connected to thefirst land 142 and the first pad 143.

The conductive layer(s) of the first redistribution structure 141 andthe first bump pad 143 may, for example, comprise copper, a copperalloy, aluminum, an aluminum alloy, or similar materials, and may beformed by general coating, photolithographic etching, and/or plating,but aspects of the present disclosure are not limited thereto.

In the example implementation shown in FIG. 1F, the first and seconddielectric layers 144 and 145 are formed on the left region of thedrawing (e.g., left of the center of the first semiconductor device 120,left of the rightmost quarter of the first semiconductor device 120,left of the rightmost three quarters of the first semiconductor device120, etc.), while only the first protection layer 144 is formed on thesubstantially right region of the drawing (e.g., right of the center ofthe first semiconductor device 120, right of the leftmost quarter of thefirst semiconductor device 120, right of the leftmost three quarters ofthe first semiconductor device 120, etc.), thereby implementing anasymmetric device. Note that such asymmetrical dielectric layerformation is not required.

As illustrated in FIG. 1G, the structure is overturned and a carrier 20is then temporarily adhered to a bottom surface of the overturneddevice. Accordingly, a temporary adhesive 30 may be applied to the firstpad 143, and the first redistribution structure 141 (e.g., includingexposed conductive and/or dielectric layers thereof), and the carrier 20may then be affixed. The temporary adhesive 30 may be formed by screenprinting, spin coating, or similar processes, but aspects of the presentdisclosure are not limited thereto. In addition, the temporary adhesive30 may be a thermal release tape, but aspects of the present disclosureare not limited thereto. The carrier 20 may comprise stainless steel,glass, a dummy semiconductor wafer (e.g., free of functionalsemiconductor devices), a porous ceramic, or similar materials, butaspects of the present disclosure are not limited thereto.

As illustrated in FIG. 1H, the wafer 10 used in forming the signaldistribution structure 110 may be removed. The second pad 118 (or aplurality thereof) may be formed on the second surface 110 b of thesignal distribution structure 110 exposed to the outside as a result ofthe removal wafer 10. In this example, the wafer 10 may be completelyremoved from the signal distribution structure 110 through grinding andetching, though the scope of this disclosure is not limited thereto. Thesecond pad 118 may then then formed by photolithographic etching andplating, though the scope of this disclosure is not limited thereto. Thesecond pad 118 may, for example, be electrically connected to the firstconductive layer 112 of the signal distribution structure 110. Althoughnot shown, when necessary, the peripheral region of the second pad 118may be covered by an additional dielectric layer (which may also bereferred to herein as a protection layer).

As illustrated in FIG. 1I, the second semiconductor die 150 may beelectrically connected to the second pad 118 positioned in theabove-described manner. For example, the second semiconductor die 150may comprise a bond pad 151, and a conductive pillar 152 and a soldercap 153 may be formed on the bond pad 151. The solder cap 153 may beelectrically connected to the second pad 118 by a reflow process. Inaddition, a solder bump may be formed on the bond pad 151. The solderbump may be electrically connected to the second pad 118 by a reflowprocess. Note that the scope of this disclosure is not however limitedto any particular type of interconnection structure(s) that may beutilized to attached the second semiconductor die 150 to the signaldistribution structure 110.

In addition, in order to stably fix the second semiconductor die 150after the process is completed, a second underfill 154 may be formedbetween the second semiconductor die 150 and the signal distributionstructure 110. In an example scenario, the second underfill 154 maycover side surfaces of the conductive pillar 152 and the solder cap 153.Such second underfill 154 may be formed in any of a variety of manners,for example by capillary underfilling. Note that the underfill 154 mayalso be formed while the second semiconductor die 150 is being placedand/or attached to the signal distribution structure 110, for exampleutilizing a pre-applied underfill. Also note that the secondsemiconductor die 150 may be underfilled during a molding process, forexample by molded underfilling.

As illustrated in FIG. 1J, the second semiconductor die 150 may beencapsulated by the second encapsulant 160, thereby protecting thesecond semiconductor die 150 from the external environment. In anexample scenario, the second encapsulant 160 may also encapsulate thesecond underfill 154. Alternatively, as discussed herein, the secondencapsulant 160 may also provide the second underfill 154. In addition,a top surface of the second semiconductor die 150 may be exposed to theoutside from a top surface of the second encapsulant 160, therebyimproving heat conduction out of the die. The top surface of the secondsemiconductor die 150 and the top surface of the second encapsulant 160may be coplanar and may be substantially planar. In another examplescenario, the top surface of the second semiconductor die 150 may becompletely encapsulated by the second encapsulant 160.

The carrier 20 may then be removed utilizing any or a variety oftechniques. For example, heat or UV light may be supplied to eliminateadhesiveness of the temporary adhesive 30, thereby removing the carrier20. Alternatively, the carrier 20 may first be removed by grindingand/or etching and the temporary adhesive 30 may then be removed using achemical solution.

In an example implementation in which the temporary adhesive 30 isremoved using a chemical solution, the carrier 20 may comprise a porousceramic so as to provide for the chemical solution to rapidly reach thetemporary adhesive 30. The carrier 20 and the temporary adhesive 30 maythen be physically released from the device.

As illustrated in FIG. 1K, in the forming of conductive interconnectionstructures (e.g., conductive bumps, balls, pillars, wires, etc.), theconductive interconnection structures 170 may be electrically connectedto the first land 142 of the first redistribution structure 141 and thefirst pad 143, which are exposed as a result of the removing of thecarrier 20 and the temporary adhesive 30. In an example embodiment, avolatile flux may be formed (e.g., dotted) on the first land 142 and thefirst pad 143 and the conductive interconnection structures 170 (e.g.,conductive bumps or balls) may then be temporarily attached to thevolatile flux. Thereafter, the device may be transferred to a furnacemaintained at a temperature in a range of about 160° C. to about 250° C.Accordingly, the volatile flux may be volatilized to then be removed,and the conductive interconnection structures 170 may be electricallyconnected to the first land 142 and the first pad 143, respectively.Thereafter, the conductive interconnection structures 170 may be curedby cooling.

The conductive interconnection structures 170 may comprise eutecticsolders (e.g., Sn₃₇Pb), high-lead solders (e.g., Sn₉₅Pb) having a highmelting point, lead-free solders (e.g., SnAg, SnCu, SnZn, SnAu, SnZnBi,SnAgCu and SnAgBi), and similar materials, but the scope of thisdisclosure is not limited thereto. The conductive interconnectionstructures 170 may also, for example, comprise conductive pillars orposts, which may comprise copper, nickel, silver, aluminum, etc. and maybe formed by plating, sputtering, etc.

In addition, before or after the forming of the conductiveinterconnection structures 170, a laser marking process may beperformed, for example marking the kind of device, the manufacturer'sname, the production date, etc., on a surface of the secondsemiconductor die 150.

The above-described embodiment has been described with regard to only asingle semiconductor device 100. In practice, a plurality ofsemiconductor devices 100 may be simultaneously formed. After theforming of the conductive interconnection structures 170, a sawing (orother singulating) process may be performed to separate the resultantproduct into individual semiconductor devices 100. The sawing processmay, for example, be performed by sequentially sawing at least the firstencapsulant 130, the signal distribution structure 110 and the secondencapsulant 160 using a laser or a diamond blade.

As described above, in accordance with various aspects of the presentdisclosure, a semiconductor device and a method of manufacturing thereofare provided, which provide for electrically connecting semiconductordies having different pattern widths to each other using a signaldistribution structure. In an example embodiment, the firstsemiconductor die 120 may be a high-tech semiconductor die havingnanoscale pattern widths and the second semiconductor die 150 may be alow-tech semiconductor die having micro-scale pattern widths. The firstsemiconductor die 120 and the second semiconductor die 150 may beelectrically connected to each other through the signal distributionstructure 110.

In addition, according to the present disclosure, there is provided asemiconductor device, which has a low manufacturing cost and has a smallthickness using the signal distribution structure 110 without throughsilicon vias, and a manufacturing method thereof. In an exampleembodiment, the signal distribution structure 110 comprises conductivelayers and conductive vias while not including through silicon vias,which may be costly and reduce yields.

Further, according to the present disclosure, there is provided asemiconductor device, which is manufactured without using throughsilicon vias and/or a printed circuit board, and a manufacturing methodthereof. The semiconductor device may, for example, be a fan-in and/orfan-out wafer level semiconductor device.

In addition, according to the present disclosure, there is provided asemiconductor device, which can adjust or maintain warpage balance byattaching semiconductor dies to top and bottom surfaces of a signaldistribution structure, and the manufacturing method thereof.

Referring to FIG. 2 , a cross-sectional view illustrating asemiconductor device 200 according to another embodiment of the presentdisclosure is illustrated. The example semiconductor device 200 may, forexample, share any or all characteristics with the example semiconductordevice 100, and/or method of manufacturing thereof, shown in FIGS.1A-1K.

As illustrated in FIG. 2 , the semiconductor device 200 according to thepresent disclosure may include a plurality of second semiconductor die250. The respective semiconductor die 250 may be electrically connectedto the second pad 118 of the signal distribution structure 110 throughthe conductive pillar 152 and the solder cap 153 or solder bumps. Thesignal distribution structure 110 may, for example, provide signal pathsbetween any one or more of the second semiconductor die 250 and one ormore other of the second semiconductor die 250. Also for example, thesignal distribution structure 110 may provide signal paths between anyone or more of the second semiconductor die 250 and the firstsemiconductor die 120. Additionally for example, the signal distributionstructure may provide signal paths (or respective portions thereof)between one or more of the plurality of second semiconductor die 250 andthe conductive interconnection structures 170 (and thus to anotherdevice to which the semiconductor device 200 is coupled.

In addition, the second underfill 154 may be formed between each of thesemiconductor die 250 and the signal distribution structure 110.

In such a manner, the plurality of semiconductor dies 250, each havingan intrinsic function which may be the same or different, may beconnected to one single signal distribution structure 110, therebyproviding the semiconductor device 200 having various functions.

Referring to FIG. 3 , a cross-sectional view illustrating asemiconductor device 300 according to still another embodiment of thepresent disclosure is illustrated. The example semiconductor device 300may, for example, share any or all characteristics with the examplesemiconductor devices 100 and 200, and/or methods of manufacturingthereof, shown in FIGS. 1A-1K and FIG. 2 .

As illustrated in FIG. 3 , the semiconductor device 300 is configuredsuch that a bottom surface of a first semiconductor die 120 is notcompletely encapsulated by the first encapsulant 130, for example onlyside surfaces of the first semiconductor die 120 are encapsulated by thefirst encapsulant 130, but the bottom surface of the first semiconductordie 120 is not encapsulated by the first encapsulant 130. In thisexample, the bottom surface of the first semiconductor die 120 and abottom surface of the first encapsulant 130 are coplanar.

The first dielectric layer 144 and/or first and second protection layers144 and 145 may be formed on the bottom surface of the firstsemiconductor die 120, for example instead of on the bottom surface ofthe first encapsulant 130 as shown in FIG. 1F. A first conductive layerof the first redistribution structure 141 and a first land 142 may beformed between the first dielectric layer 144 and the second dielectriclayer 145 (e.g., exposed through an aperture in the second dielectriclayer 145), and a conductive interconnection structure 170 may beconnected to the first land 142.

In such a manner, the present disclosure provides the semiconductordevice 300, which has a small thickness and improved heat radiatingperformance by covering the bottom surface of the first semiconductordie 120 (or a portion thereof) by the first protection layer 144 and/orfirst and second protection layers 144 and 145, which may comprise thinlayers, without being encapsulated by the first encapsulant 130.

Referring to FIG. 4 , a cross-sectional view illustrating asemiconductor device 400 according to still another embodiment of thepresent disclosure is illustrated. The example semiconductor device 400may, for example, share any or all characteristics with the examplesemiconductor devices 100, 200 and 300, and/or methods of manufacturingthereof, shown in FIGS. 1A-1K, 2 and 3 . As illustrated in FIG. 4 , thesemiconductor device 400 comprises a second post 419 formed on thesecond surface 110 b of the signal distribution structure 110, and asecond redistribution structure 481, and/or a second bump 483 connectedto the second post 419.

The second post 419 may be formed on a second pad 118 connected to thesecond surface 110 b of the signal distribution structure 110, forexample, a first conductive layer 112. More specifically, a plurality ofsecond pads 118 may be arranged on the second surface 110 b of thesignal distribution structure 110 in a matrix configuration. Also, aplurality of the second posts 419 may be formed on a plurality of thesecond pads 118, which in this example are positioned around a periphery(e.g., at or near an edge) of the second surface 110 b of the signaldistribution structure 110.

The second pad 118 and/or the second post 419 may be formed by generalplating or photolithographic etching and may comprise copper, a copperalloy, aluminum, an aluminum alloy, or similar material, but aspects ofthe present disclosure are not limited thereto.

In addition, in an example embodiment, the second redistributionstructure 481 may be electrically connected to one or more of the secondposts 419 to the left of the second semiconductor die 150, and thesecond bump pad 483 may be electrically connected to one or more of thesecond posts 419 to the right of the second semiconductor die 150. Afirst dielectric layer 484 may be first formed on surfaces of the secondencapsulant 160 and the second semiconductor die 150 with an opening forthe second post 419. A second pad 483 and/or a first conductive layer ofthe second redistribution structure 481 may then be formed, and a regionfirst conductive layer of the second redistribution structure 481, whichis not required to be exposed to the outside, may be covered by thesecond dielectric layer 485.

In an example embodiment, the second redistribution structure 481 is ofa fan-in type that extends from the outside to the inside (e.g.,distributing signals from outside of the footprint of the secondsemiconductor die 150 to within the footprint of the secondsemiconductor die 150). Accordingly, a second land 482 exposed to theoutside may be positioned on (or over) a top surface of the secondsemiconductor die 150. In this manner, different semiconductor devices(not shown) may later be mounted on the second land 482 of the secondredistribution structure 481 and the second bump pad 483. Accordingly,FIG. 4 illustrates a package-on-package (POP) type semiconductor device400.

First and second dielectric layers 484 and 485 may be formed on thesubstantially left region of the drawing (e.g., left of the center ofthe first semiconductor device 120, left of the rightmost quarter of thefirst semiconductor device 120, left of the rightmost three quarters ofthe first semiconductor device 120, etc.) and the first dielectric layer484 may be formed on the substantially right region of the drawing(e.g., right of the center of the first semiconductor device 120, rightof the leftmost quarter of the first semiconductor device 120, right ofthe leftmost three quarters of the first semiconductor device 120,etc.), thereby implementing an asymmetric device.

Referring to FIG. 5 , a cross-sectional view illustrating asemiconductor device 500 according to still another embodiment of thepresent disclosure is illustrated. The example semiconductor device 400may, for example, share any or all characteristics with the examplesemiconductor devices 100, 200, 300 and 400, and/or methods ofmanufacturing thereof, shown in FIGS. 1A-1K, 2, 3 and 4 .

As illustrated in FIG. 5 , the semiconductor device 500 comprises asecond semiconductor die 150 exposed to the outside. In this manner, topand side surfaces of the second semiconductor die 150 are notencapsulated by a second encapsulant 160 but are exposed to the outside.A second underfill 154 may be filled between the second semiconductordie 150 and a signal distribution structure 110.

In such a manner, the present disclosure provides the semiconductordevice 500, which has improved heat radiating performance by completelyexposing the top and side surfaces of the second semiconductor die 150.Note that the second underfill 154 may contact at least a portion of theside surfaces of the second semiconductor die 150.

The present disclosure provides a semiconductor package using a corelesssignal distribution structure. The coreless signal distributionstructure may comprise at least one dielectric layer, at least oneconductive layer, a first surface, and a second surface opposite to thefirst surface. The semiconductor package may also comprise a firstsemiconductor die having a first bond pad on a first die surface, wherethe first semiconductor die is bonded to the first surface of thecoreless signal distribution structure via the first bond pad, and asecond semiconductor die having a second bond pad on a second diesurface, where the second semiconductor die is bonded to the secondsurface of the coreless signal distribution structure via the secondbond pad. The semiconductor package may further comprise a firstencapsulant material encapsulating side surfaces of the firstsemiconductor die and a portion of the first surface of the corelesssignal distribution structure, as well as a redistribution structure onthe first encapsulant, where the redistribution structure comprises atleast one conductive layer and at least one dielectric layer.

A first metal post may be on the coreless signal distribution structureadjacent to a first edge of the first semiconductor die, where the firstmetal post extends through the encapsulant material. A second metal postmay be on the coreless signal distribution structure adjacent to asecond edge of the first semiconductor die, where the second metal postextends through the encapsulant material. The redistribution structuremay be electrically coupled to the first metal post and aninterconnection structure on the first encapsulant.

A dielectric layer of the redistribution structure may contact the firstmetal post and the interconnection structure but not the second metalpost. The interconnection structure may comprise a conductive bump. Asecond metal post may be coupled to the coreless signal distributionstructure and extend through the second encapsulant material. A secondencapsulant may encapsulate the second semiconductor die and is coplanarwith a surface of the second semiconductor die opposite the second diesurface.

Embodiments of the present disclosure provide a semiconductor device,which implements a manufacturing method thereof, by electricallyconnecting semiconductor dies having different pattern widths, to eachother using a signal distribution structure. Embodiments of the presentdisclosure provide a semiconductor device, which has a low manufacturingcost and has a small thickness using a signal distribution structurewithout TSVs, and a manufacturing method thereof.

Embodiments of the present disclosure provide a semiconductor device,which can be manufactured without using TSVs and/or a printed circuitboard, and can manufacture a fan-in and/or fan-out wafer level packageand/or a package-on-package (POP), and a manufacturing method thereof.Embodiments of the present disclosure provide a semiconductor device,which can adjust or maintain warpage balance of a package, and amanufacturing method thereof, by attaching semiconductor die to top andbottom surfaces of a signal distribution structure.

According to an aspect of the present disclosure, there is provided amethod of manufacturing a semiconductor device, the manufacturing methodincluding forming a signal distribution structure having a first surfaceand a second surface on a surface of a wafer and forming a first pad anda first post on the first surface of the signal distribution structure,electrically connecting a first semiconductor die to the first pad ofthe signal distribution structure, encapsulating the first post and thefirst semiconductor die using a first encapsulant, attaching a carrierto the first encapsulant and removing the wafer, forming a second pad onthe second surface of the signal distribution structure and electricallyconnecting a second semiconductor die to the second pad, and forming aconductive interconnection structure on the first post after removingthe carrier.

According to another aspect of the present disclosure, there is provideda semiconductor device including a signal distribution structure havinga first surface and a second surface, where the first surface includes afirst pad and a first post formed thereon and the second surfaceincludes a second pad formed thereon. The semiconductor device alsoincludes a first semiconductor die electrically connected to the firstpad of the signal distribution structure, a first encapsulantencapsulating the first post and the first semiconductor die, a secondsemiconductor die electrically connected to the second pad of the signaldistribution structure, and a conductive interconnection structureelectrically connected to the first post.

As described above, in a semiconductor device according to embodimentsof the present disclosure and a manufacturing method thereof, a processis implemented that electrically connects semiconductor die for havingdifferent pattern widths to each other using a signal distributionstructure. In an example embodiment, a semiconductor die havingnano-scale patterns is electrically connected to a top surface of thesignal distribution structure, and another semiconductor die havingmicro-scale patterns is electrically connected to a bottom surface ofthe signal distribution structure.

In addition, in the semiconductor device according to embodiments of thepresent disclosure and the manufacturing method thereof, thesemiconductor device can be manufactured at a low cost and has a smallthickness using a signal distribution structure without through siliconvias. In an example embodiment, the signal distribution structurecomprises conductive layers, dielectric layers and conductive vias whilenot including TSVs, thereby providing the semiconductor device having areduced thickness at a low manufacturing cost.

Further, in a semiconductor device according to embodiments of thepresent disclosure and a manufacturing method thereof, the semiconductordevice can be manufactured without using TSVs or a printed circuitboard, and a fan-in and/or fan-out wafer level package and/or apackage-on-package (POP) can be manufactured. In an example embodiment,the present disclosure provides a package-on-package (POP) devicefabricated by preparing a wafer level package having a fan-in and/orfan-out redistribution structure electrically connected to a conductivepost, or preparing another conductive post and mounting another packageon the conductive post by another redistribution structure electricallyconnected to the conductive post.

In addition, in a semiconductor device according to embodiments of thepresent disclosure and a manufacturing method thereof, warpage balancecan be adjusted or maintained by attaching semiconductor die to top andbottom surfaces of a signal distribution structure. In an exampleembodiment, the present disclosure provides a semiconductor device,which has a reduced difference between thermal expansion coefficients ofthe top and bottom surfaces of the signal distribution structure byattaching semiconductor die having substantially the same size and/orthickness to the top and bottom surfaces of the signal distributionstructure, thereby preventing warpage.

While various aspects supporting the disclosure have been described withreference to certain example embodiments, it will be understood by thoseskilled in the art that various changes may be made and equivalents maybe substituted without departing from the scope of the presentdisclosure. In addition, many modifications may be made to adapt aparticular situation or material to the teachings of the presentdisclosure without departing from its scope. Therefore, it is intendedthat the present disclosure not be limited to the particular exampleembodiments disclosed, but that the present disclosure will include allembodiments falling within the scope of the appended claims.

What is claimed is:
 1. A semiconductor device comprising: a corelesssignal distribution structure comprising at least one dielectric layer,at least one conductive layer, a first surface, and a second surfaceopposite to the first surface; a first semiconductor die having a firstbond pad on a first die surface, the first semiconductor die bonded tothe first surface of the coreless signal distribution structure via thefirst bond pad; a second semiconductor die having a second bond pad on asecond die surface, the second semiconductor die bonded to the secondsurface of the coreless signal distribution structure via the secondbond pad; a metal post electrically coupled to the first surface of thecoreless signal distribution structure; and a first encapsulant materialencapsulating side surfaces and a surface opposite the first die surfaceof the first semiconductor die, the metal post, and a portion of thefirst surface of the coreless signal distribution structure.
 2. Thesemiconductor device according to claim 1, wherein the metal postcomprises copper and extends through the encapsulant material.
 3. Thesemiconductor device according to claim 1, comprising a secondencapsulant material encapsulating the second semiconductor die.
 4. Thesemiconductor device according to claim 3, comprising a second metalpost coupled to the coreless signal distribution structure and extendingthrough the second encapsulant material.
 5. The semiconductor deviceaccording to claim 3, wherein a surface of the second encapsulant iscoplanar with a surface of the second semiconductor die opposite thesecond die surface.
 6. The semiconductor device according to claim 1,wherein a conductive pillar electrically couples the first bond pad ofthe first semiconductor die to the coreless signal distributionstructure.
 7. The semiconductor device according to claim 1, comprisinga redistribution structure on the first encapsulant and electricallycoupled to the metal post, wherein the redistribution structurecomprises at least one conductive layer and at least one dielectriclayer.
 8. The semiconductor device according to claim 1, wherein thecoreless signal distribution structure has a linewidth of 1-10 μm.
 9. Asemiconductor device comprising: a coreless signal distributionstructure comprising at least one dielectric layer, at least oneconductive layer, a first surface, and a second surface opposite to thefirst surface; a first semiconductor die having a first bond pad on afirst die surface, the first semiconductor die bonded to the firstsurface of the coreless signal distribution structure via the first bondpad; a second semiconductor die having a second bond pad on a second diesurface, the second semiconductor die bonded to the second surface ofthe coreless signal distribution structure via the second bond pad; afirst encapsulant material encapsulating side surfaces of the firstsemiconductor die and a portion of the first surface of the corelesssignal distribution structure; and a redistribution structure on thefirst encapsulant, wherein the redistribution structure comprises atleast one conductive layer and at least one dielectric layer.
 10. Thesemiconductor device of claim 9, comprising a first metal post on thecoreless signal distribution structure adjacent to a first edge of thefirst semiconductor die, the first metal post extending through theencapsulant material.
 11. The semiconductor device of claim 10,comprising a second metal post on the coreless signal distributionstructure adjacent to a second edge of the first semiconductor die, thesecond metal post extending through the encapsulant material.
 12. Thesemiconductor device of claim 11, wherein the redistribution structureis electrically coupled to the first metal post and an interconnectionstructure on the first encapsulant.
 13. The semiconductor device ofclaim 12, wherein a dielectric layer of the redistribution structurecontacts the first metal post and the interconnection structure but notthe second metal post.
 14. The semiconductor device of claim 12, whereinthe interconnection structure comprises a conductive bump.
 15. Thesemiconductor device of claim 9, comprising encapsulating the secondsemiconductor die utilizing a second encapsulant material.
 16. Thesemiconductor device of claim 11, wherein a second encapsulantencapsulates the second semiconductor die and is coplanar with a surfaceof the second semiconductor die opposite the second die surface.
 17. Amethod of fabricating a semiconductor device, the method comprising:fabricating a coreless signal distribution structure by forming at leastone dielectric layer and at least one conductive layer on a firsttemporary substrate; forming a metal post on the coreless signaldistribution structure; bonding a first semiconductor die to a firstsurface of the coreless signal distribution structure; encapsulating thefirst semiconductor die, the metal post, and a portion of the firstsurface of the coreless signal distribution structure utilizing anencapsulant material; forming a redistribution structure on theencapsulant material; bonding a second substrate to the redistributionstructure; removing the first temporary substrate; and bonding a secondsemiconductor die to a second surface of the signal distributionstructure opposite the first surface.
 18. The method of claim 17,comprising encapsulating the second semiconductor die utilizing a secondencapsulant material.
 19. The method of claim 18, wherein a surface ofthe second encapsulant material is coplanar with a surface of the secondsemiconductor die.
 20. The method of claim 17, comprising forming aconductive bump on the post coplanar with the redistribution structure.